期刊
GOLD BULLETIN
卷 43, 期 3, 页码 189-199出版社
SPRINGER HEIDELBERG
DOI: 10.1007/BF03214986
关键词
gold; nanoparticles; memory devices; charge trapping
资金
- World Gold Council [RP05-06]
- NRF/MEST [R11-2005-048-00000-0]
- Korea Ministry of Knowledge Economy
- Korea government (MEST) [2008-0059952, 2009-0077593, 2010-0015014, 2010-0014925]
Recently, much progress has been made toward the fabrication of non-volatile memory devices based on metallic nanoparticles. Among the many kinds of nanoparticles, gold nanoparticles are some of the most widely used materials for charge trapping elements in non-volatile memory devices because they are chemically stable, easily synthesized, and have a high work function. Various synthesis methods have been applied to fabricate gold nanoparticle-based non-volatile memory devices and recent progress indicates that gold is a very promising material for non-volatile memory applications. In this article, the recent advances in fabrication and characterization of gold nanoparticle-based nonvolatile memory devices, with an emphasis on flash memory-type memory devices, are reviewed. Detailed device fabrication, characterization, and future directions are reported based on the recent research activities and literature.
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