期刊
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
卷 33, 期 6, 页码 -出版社
A V S AMER INST PHYSICS
DOI: 10.1116/1.4926378
关键词
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资金
- Human Resources Development Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant - Korea Government Ministry of Trade, Industry and Energy [20124010203260]
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Science, ICT and Future Planning [2012R1A1A2042761]
- Korea Evaluation Institute of Industrial Technology (KEIT) [20124010203260, 20144010200760] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [21A20131812182, 2012R1A1A2042761] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
The authors report on a facile method for introducing defects in graphene in a controlled manner. Samples were mounted face down between supports, and exposed to oxygen plasma in a reactive ion etching (RIE) system. Defect density and the rate of defect formation in graphene were analyzed according to the oxygen flow rates and power conditions, using Raman spectroscopy. The mechanism of defect formation was systematically investigated via both experiment and density functional theory (DFT) calculation. Based on our DFT results, sp(3) oxygen in the epoxide form would most likely be induced in pristine graphene after exposure to the oxygen plasma. Defect engineering through the fine tuning of the graphene disorder using a conventional RIE system has great potential for use in various graphene-based applications. (C) 2015 American Vacuum Society.
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