期刊
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
卷 33, 期 1, 页码 -出版社
A V S AMER INST PHYSICS
DOI: 10.1116/1.4904025
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资金
- Institut Carnot Energies du Futur
- Grenoble INP
- Investments for the Future Programme [AN-10-LABX-44-01]
Undoped and nitrogen doped TiO2 thin films were deposited by atomic layer deposition on planar substrates. Deposition on 3D-architecture substrates made of metallic foams was also investigated to propose architectured photovoltaic stack fabrication. All the films were deposited at 265 degrees C and nitrogen incorporation was achieved by using titanium isopropoxide, NH3 and/or N2O as precursors. The maximum nitrogen incorporation level obtained in this study was 2.9 at. %, resulting in films exhibiting a resistivity of 115 Omega cm (+/-10 Omega cm) combined with an average total transmittance of 60% in the 400-1000 nm wavelength range. Eventually, TiO2 thin films were deposited on the 3D metallic foam template. (C) 2014 American Vacuum Society.
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