4.1 Article

Raman scattering studies of the lattice dynamics in layered MoS2

期刊

JOURNAL OF THE KOREAN PHYSICAL SOCIETY
卷 66, 期 10, 页码 1575-1580

出版社

KOREAN PHYSICAL SOC
DOI: 10.3938/jkps.66.1575

关键词

MoS2; Raman scattering; Phonon

资金

  1. National Research Foundation of Korea - Korean Government [NRF-2012S1A2A1A01031711]
  2. National Research Foundation of Korea [2012S1A2A1A01031711] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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We report non-resonant and resonant Raman scattering studies of layered MoS2. Owing to its reduced dimensionality, few layered MoS2 is more sensitive to the difference between inter- and intra-layer coupling, which results in unusual frequency shifts of the Raman phonon modes. In addition, relative intensities between the two Raman active phonon modes E-2g (1) and A(1g) unexpectedly depend on the laser excitation energy, which might be associated with the electronic band structure, including spin-orbit coupling and phonon dispersions. Through resonant Raman scattering measurements, the indirect-to-direct band gap behavior and electron-phonon interaction information were obtained. Raman scattering spectroscopy is seen to be very effective for studying the layer-dependent characteristics of layered MoS2.

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