4.8 Article

Tunable Piezoresistivity of Nanographene Films for Strain Sensing

期刊

ACS NANO
卷 9, 期 2, 页码 1622-1629

出版社

AMER CHEMICAL SOC
DOI: 10.1021/nn506341u

关键词

graphene; ultrasensitivity; controllable size; tunneling effect; artificial electronic skin

资金

  1. National Basic Research Program of China (973 Program) [2013CB934500, 2012CB921302, 2013CBA01602]
  2. National Science Foundation of China (NSFC) [91223204, 61325021, 61390503, 11204358, 11174333]
  3. Strategic Priority Research Program (B) of the Chinese Academy of Sciences [XDB07010100]

向作者/读者索取更多资源

Graphene-based strain sensors have attracted much attention recently. Usually, there is a trade-off between the sensitivity and resistance of such devices, while larger resistance devices have higher energy consumption. In this paper, we report a tuning of both sensitivity and resistance of graphene strain sensing devices by tailoring graphene nanostructures. For a typical piezoresistive nanographene film with a sheet resistance of similar to 100 K Omega/square, a gauge factor of more than 600 can be achieved, which is 50X larger than those in previous studies. These films with high sensitivity and low resistivity were also transferred on flexible substrates for device integration for force mapping. Each device shows a high gauge factor of more than 500, a long lifetime of more than 10(4) cycles, and a fast response time of less than 4 ms, suggesting a great potential in electronic skin applications.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据