4.8 Article

Weak Van der Waals Stacking, Wide-Range Band Gap, and Raman Study on Ultrathin Layers of Metal Phosphorus Trichalcogenides

期刊

ACS NANO
卷 10, 期 2, 页码 1738-1743

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsnano.5b05927

关键词

metal phosphorus trichalcogenides; two-dimensional semiconductors; cleavage energy; band gap; Raman spectroscopy

资金

  1. National Research Foundation, Prime Minister's Office, Singapore
  2. Singapore Ministry of Education [MOE2013-T2-1-049, 2013-T1-002-232, MoE AcRT RG125/14]
  3. AFOSR via its Asian Office of Aerospace Research Development [FA2368-13-1-4112]

向作者/读者索取更多资源

2D semiconducting metal phosphorus trichalcogenides, particularly the bulk crystals of MPS3 (M = Fe, Mn, Ni, Cd and Zn) sulfides and MPSe3 (M = Fe and Mn) selenides, have been synthesized, crystallized and exfoliated into monolayers. The Raman spectra of monolayer FePS3 and 3-layer FePSe3 show the strong intralayer vibrations and structural stability of the atomically thin layers under ambient condition. The band gaps can be adjusted by element choices in the range of 1.3-3.5 eV. The wide-range band gaps suggest their optoelectronic applications in a broad wavelength range. The calculated cleavage energies of MPS3 are smaller than that of graphite. Therefore, the monolayers used for building of heterostructures by van der Waals stacking could be considered as the candidates for artificial 2D materials with unusual ferroelectric and magnetic properties.

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