Radiation emission by electrons channeling in bent silicon crystals

Results of numerical simulations of electron channeling and emission spectra are reported for straight and uniformly bent silicon crystals. The projectile trajectories are computed using the newly developed module [G. B. Sushko, V. G. Bezchastnov, I. A. Solov'yov, A. V. Korol, W. Greiner, A. V. Solov'yov, J. Comput. Phys. 252, 404 (2013)] of the MBN Explorer package(b) [I. A. Solov'yov, A. V. Yakubovich, P. V. Nikolaev, I. Volkovets, A. V. Solov'yov, J. Comput. Chem. 33, 2412 (2013)]. The electron channeling along Si(110) crystallographic planes is studied for the projectile energy 855 MeV.