4.2 Article

Facile growth of monolayer MoS2 film areas on SiO2

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EUROPEAN PHYSICAL JOURNAL B
卷 86, 期 5, 页码 -

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SPRINGER
DOI: 10.1140/epjb/e2013-31011-y

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资金

  1. US National Science Foundation (UCR, Columbia University) [DMR 1106210]
  2. US Department of Energy (UCR, Columbia University) [DE-FG02-07ER15842]
  3. Army Research Office [W911NF11-1-0182 (UCR)]
  4. US DOE BES Division of Materials Science and Engineering
  5. U.S. Department of Energy's National Nuclear Security Administration [DE-AC04-94AL85000]
  6. Direct For Mathematical & Physical Scien
  7. Division Of Materials Research [1106210] Funding Source: National Science Foundation
  8. Direct For Mathematical & Physical Scien
  9. Division Of Materials Research [1106172] Funding Source: National Science Foundation

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Areas of single-layer MoS2 film can be prepared in a tube furnace without the need for temperature control. The films were characterized by means of Raman spectroscopy, photoluminescence, low-energy electron diffraction and microscopy, and X-ray photoelectron spectroscopy and mapping. Transport measurements show n-doped material with a mobility of 0.26 cm(2) V-1 s(-1).

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