期刊
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
卷 137, 期 11, 页码 3852-3858出版社
AMER CHEMICAL SOC
DOI: 10.1021/jacs.5b00137
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资金
- Northwestern University from the United States Department of Energy (DOE) [DE-SC0000989]
- DOE from Northwestern University
- National Research Foundation of Korea (NRF) - Ministry of Science ICT & Future Planning [NRF-2014R1A1A1002938]
- Ministry of Education [NRF20100020209]
This paper describes the influence of the substitution of fluorine for hydrogen on the rate of charge transport by hole tunneling through junctions of the form (AgO2C)-O-TS(CH2)(n)(CF2)(m)T//Ga2O3/EGaIn, where T is methyl (CH3) or trifluoromethyl (CF3). Alkanoate-based selfassembled monolayers (SAMs) having perfluorinated groups (R-F) show current densities that are lower (by factors of 20-30) than those of the homologous hydrocarbons (R-H), while the attenuation factors of the simplified Simmons equation for methylene (beta = (1.05 +/- 0.02)n(CH2)(-1)) and difluoromethylene (beta = (1.15 +/- 0.02)(nCF2)(-1)) are similar (although the value for (CF2)(n) is statistically significantly larger). A comparative study focusing on the terminal fluorine substituents in SAMs of omega-tolyl- and -phenyl-alkanoates suggests that the C-F//Ga2O3 interface is responsible for the lower tunneling currents for CF3. The decrease in the rate of charge transport in SAMs with R-F groups (relative to homologous RH groups) is plausibly due to an increase in the height of the tunneling barrier at the T//Ga2O3 interface, and/or to weak van der Waals interactions at that interface.
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