One-Step Synthesis and Characterization of SiC, Mo2C, and WC Nanostructures

This review describes a novel approach for the syntheses of various carbides of silicon, tungsten, and molybdenum at a relatively low temperature by using the. RAPET (Reactions under Autogenic Pressure at Elevated Temperature) process. The solvent-, template-free and straightforward RAPET process was used to synthesize a range of new carbide materials with or without the Use Ut Catalysts. The thermolysis of precursor(s) in a closed reactor without using additional reducing gases and the characterization of the Obtained high-surface-area beta-SiC nanorods, micro- or nanosized Mo3C spheres and WC nanotubes are the key issues described. The capability of the RAPET process to fabricate nanoparticles, nanorods, and nanotubes of different carbides in a single-step reaction is also demonstrated. By taking advantage of the achieved highest surface area (563 m(2)/g) of SiC, it was possible to store approximately 2 wt.-% of H-2 at room temperature and 6 MPa. ((c) Wiley-VCH Verlag GmbH & Co. KGaA, 69451 Weinheim, Germany, 2009)