Reconfigurable Ion Gating of 2H-MoTe2 Field-Effect Transistors Using Poly(ethylene oxide)-CsClO4 Solid Polymer Electrolyte

Transition metal dichalcogenides are relevant for electronic devices owing to their sizable band gaps and absence of dangling bonds on their surfaces. For device development, a controllable method for doping these materials is essential. In this paper, we demonstrate an electrostatic gating method using a solid polymer electrolyte, poly(ethylene oxide) and CsClO4, on exfoliated, multilayer 2H-MoTe2. The electrolyte enables the device to be efficiently reconfigured between n- and p-channel operation with ON/OFF ratios of approximately 5 decades. Sheet carrier densities as high as 1.6 x 10(13) cm(-2) can be achieved because of a large electric double layer capacitance (measured as 4 mu F/cm(2)). Further, we show that an in-plane electric field can be used to establish a cation/anion transition region between source and drain, forming a p-n junction in the 2H-MoTe2 channel. This junction is locked in place by decreasing the temperature of the device below the glass transition temperature of the electrolyte. The ideality factor of the p-n junction is 2.3, suggesting that the junction is recombination dominated.