期刊
ACS NANO
卷 9, 期 6, 页码 5976-5983出版社
AMER CHEMICAL SOC
DOI: 10.1021/acsnano.5b00736
关键词
transition metal dichalcogenide; molybdenum ditelluride; field-effect transistor; ambipolar; polarity control
类别
资金
- Japan Society for the Promotion of Science (JSPS) [25107004]
- Grants-in-Aid for Scientific Research [25107004] Funding Source: KAKEN
A doping-free transistor made of ambipolar cc-phase molybdenum ditelluride (alpha-MoTe2) is proposed in which the transistor polarity (p-type and n-type) is electrostatically controlled by dual top gates. The voltage signal in one of the gates determines the transistor polarity, while the other gate modulates the drain current. We demonstrate the transistor operation experimentally, with electrostatically controlled polarity of both p- and n-type in a single transistor.
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