4.6 Article

Effect of van der Waals interactions on the structural and binding properties of GaSe

期刊

JOURNAL OF SOLID STATE CHEMISTRY
卷 232, 期 -, 页码 67-72

出版社

ACADEMIC PRESS INC ELSEVIER SCIENCE
DOI: 10.1016/j.jssc.2015.09.002

关键词

Layered semiconductors; Ab initio calculations; Crystal structure; Binding properties

资金

  1. Tomsk State University Academic DJ. Mendeleev Fund Program [8.2.10.2015, 8.2.06.2015]
  2. Ministry of Education and Science of the Russian Federation [3.392.2014K]

向作者/读者索取更多资源

The influence of van der Waals interactions on the lattice parameters, band structure, elastic moduli and binding energy of layered GaSe compound has been studied using projector-augmented wave method within density functional theory. We employed the conventional local/semilocal exchange-correlation functionals and recently developed van der Waals functionals which are able to describe dispersion forces. It is found that application of van der Waals density functionals allows to substantially increase the accuracy of calculations of the lattice constants a and c and interlayer distance in GaSe at ambient conditions and under hydrostatic pressure. The pressure dependences of the a-parameter, Ga-Ga, Ga-Se bond lengths and Ga-Ga-Se bond angle are characterized by a relatively low curvature, while c(p) has a distinct downward bowing due to nonlinear shrinking of the interlayer spacing. From the calculated binding energy curves we deduce the interlayer binding energy of GaSe, which is found to be in the range 0.172-0.197 eV/layer (14.2-16.2 meV/A(2)). (C) 2015 Elsevier Inc. All rights reserved.

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