4.4 Article

Vacancy-defect-induced diminution of thermal conductivity in silicene

期刊

EPL
卷 99, 期 3, 页码 -

出版社

IOP PUBLISHING LTD
DOI: 10.1209/0295-5075/99/36001

关键词

-

资金

  1. Research Grants Council of Hong Kong SAR [CityU6/CRF/08]
  2. Centre for Applied Computing and Interactive Media (ACIM) of City University of Hong Kong
  3. Research Grant Council
  4. University Grant Committee of the HKSAR
  5. Hong Kong Baptist University

向作者/读者索取更多资源

Using equilibrium molecular dynamic simulations, we calculate the phonon thermal conductivity of a graphene-like silicon nanosheet called silicene at room temperature. We find that the in-plane thermal conductivity of silicene sheets is about one order of magnitude lower than that of bulk silicon. We further investigate the effects of vacancy defects on thermal conductivity and observe its significant diminution owing to the effect of phonon-defect scattering. Our results show that phonon transport in a silicene sheet is strongly affected by vacancy concentration, vacancy size, and vacancy boundary shape; this could be used to guide defects engineering of the thermal properties of low-dimensional silicon materials. Copyright (C) EPLA, 2012

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.4
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据