期刊
EPL
卷 88, 期 5, 页码 -出版社
EPL ASSOCIATION, EUROPEAN PHYSICAL SOCIETY
DOI: 10.1209/0295-5075/88/55001
关键词
-
资金
- BMBF [FSP 301 FLASH]
- Deutsche Forschungsgemeinschaft [RE 1141/11-1]
We study theoretically the electronic excitation within semiconductors under irradiation with an ultrashort VUV laser pulse as provided by the new free-electron laser FLASH in Hamburg, Germany. Applying Monte Carlo technique we obtain the transient distribution of the excited electrons within solid silicon. We find the statistical nature of an effective energy gap for multiple electronic excitation, providing the fundamental understanding of the experimentally accessible pair creation energy measured as a long time limit. Considering photoabsorbtion, impact ionizations and Coster-Kroning transitions, we estimate the pair creation energy and give a general formula to calculate the effective energy gap for semiconductors. Copyright (C) EPLA, 2009
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据