期刊
EPL
卷 84, 期 2, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1209/0295-5075/84/27010
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资金
- Natural Science Foundation of China
- Ministry of Science and Technology of China [2006CB601001]
- National Basic Research Program of China [2006CB922005]
We synthesized the samples Ba1-xMxFe2As2 (M=La and K) with a ThCr2Si2-type structure. These samples were systematically characterized by resistivity, thermoelectric power (TEP) and Hall coefficient (R-H). BaFe2As2 shows an anomaly in resistivity at about 140 K. The substitution of La for Ba leads to a shift of the anomaly to low temperature, but no superconducting transition is observed. Potassium doping leads to the suppression of the anomaly in resistivity and induces superconductivity at 38K. The Hall coefficient and TEP measurements indicate that the TEP is negative for BaFe2As2 and La-doped BaFe2As2, indicating an n-type carrier; while potassium doping leads to a change of the sign in R-H and TEP. It definitely indicates a p-type carrier in the superconducting Ba1-xKxFe2As2 with double FeAs layers, being in contrast to the case of LnO(1-x)F(x)FeAs with a single FeAs layer. Copyright (c) EPLA, 2008
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