4.8 Article

Magnetoelectric Coupling in Well-Ordered Epitaxial BiFeO3/CoFe2O4/SrRuO3 Heterostructured Nanodot Array

期刊

ACS NANO
卷 10, 期 1, 页码 1025-1032

出版社

AMER CHEMICAL SOC
DOI: 10.1021/acsnano.5b06339

关键词

multiferroic composite; nanodot array; magnetoelectric coupling; AAO template; CoFe2O4; BiFeO3

资金

  1. Natural Science Foundation of China [51272078, 11234005, 51072061, 51332007]
  2. State Key Program for Basic Researches of China [2015CB921202]
  3. Project for Guangdong Province Universities and Colleges Pearl River Scholar Scheme
  4. International Science & Technology Cooperation Platform Program of Guangzhou [2014J4500016]
  5. Program for Changjiang Scholars and Innovative Research Team in University of China [IRT1243]

向作者/读者索取更多资源

Multiferroic magnetoelectric (ME) composites exhibit sizable ME coupling at room temperature, promising applications in a wide range of novel devices. For high density integrated devices, it is indispensable to achieve a well-ordered nanostructured array with reasonable ME coupling. For this purpose, we explored the well ordered array of isolated epitaxial BiFeO3/CoFe2O4/SrRuO3 heterostructured nanodots fabricated by nanoporous anodic alumina (AAO) template method. The arrayed heterostructured nanodots demonstrate well-established epitaxial structures and coexistence of piezoelectric and ferromagnetic properties, as revealed by transmission electron microscopy (TEM) and peizoeresponse/magnetic force microscopy (PFM/MFM). It was found that the heterostructured nanodots yield apparent ME coupling, likely due to the effective transfer of interface couplings along with the substantial release of substrate clamping. A noticeable change in piezoelectric response of the nanodots can be triggered by magnetic field, indicating a substantial enhancement of ME coupling. Moreover, an electric field induced magnetization switching in these nanodots can be observed, showing a large reverse ME effect. These results offer good opportunities of the nanodots for applications in high-density ME devices, e.g., high density recording (>100 Gbit/in.(2)) or logic devices.

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