期刊
ENERGY & ENVIRONMENTAL SCIENCE
卷 7, 期 9, 页码 3040-3051出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c4ee01529k
关键词
-
资金
- National Research Foundation (NRF) of Korea [2012R1A1A2005855, 2012M3A6A7055540, 2013M3C1A3065522, 2009-0093020]
- International Cooperation of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant - Korea government Ministry of Knowledge Economy [2012T100100740]
- Korea Evaluation Institute of Industrial Technology (KEIT) [20128520010010] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2012R1A1A2005855, 2009-0093020, 10Z20130000004, 2012M3A6A7055540, 2013M3C1A3065522] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We report a series of semi-crystalline, low band gap (LBG) polymers and demonstrate the fabrication of highly efficient polymer solar cells (PSCs) in a thick single-cell architecture. The devices achieve a power conversion efficiency (PCE) of over 7% without any post-treatment (annealing, solvent additive, etc.) and outstanding long-term thermal stability for 200 h at 130 degrees C. These excellent characteristics are closely related to the molecular structures where intra-and/or intermolecular noncovalent hydrogen bonds and dipole-dipole interactions assure strong interchain interactions without losing solution processability. The semi-crystalline polymers form a well-distributed nano-fibrillar networked morphology with PC70BM with balanced hole and electron mobilities (a h/e mobility ratio of 1-2) and tight interchain packing (a pi-pi stacking distance of 3.57-3.59 A) in the blend films. Furthermore, the device optimization with a processing additive and methanol treatment improves efficiencies up to 9.39% in a similar to 300 nm thick conventional single-cell device structure. The thick active layer in the PPDT2FBT: PC70BM device attenuates incident light almost completely without damage in the fill factor (0.71-0.73), showing a high short-circuit current density of 15.7-16.3 mA cm(-2). Notably, PPDT2FBT showed negligible changes in the carrier mobility even at similar to 1 mm film thickness.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据