期刊
ENERGY & ENVIRONMENTAL SCIENCE
卷 6, 期 6, 页码 1868-1878出版社
ROYAL SOC CHEMISTRY
DOI: 10.1039/c3ee40371h
关键词
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资金
- U.S. Department of Energy [FWP-4913A]
- U.S. Department of Energy Office of Science Laboratory by UChicago Argonne, LLC. [DE-AC02-06CH11357]
- Department of Energy (DOE) Office of Energy Efficiency and Renewable Energy (EERE)
- DOE [DE-AC05-06OR23100]
Copper sulfide films of nanometer thickness are grown by atomic layer deposition (ALD) and their structural and optoelectronic properties investigated as a function of time and storage environment. At temperatures as low as 80 degrees C polycrystalline thin films are synthesized, which index to the stoichiometric (Cu2S) chalcocite phase. As-prepared and prior to exposure to room ambient, conductive films are obtained as a result of a high mobility (4 cm(2) V-1 s(-1)) and a relatively moderate p-type doping of 10(18) cm(-3). However, exposure to air results in a rapid rise in conductivity due to heavy p-type doping (>10(20) cm(-3)). The evolving electronic properties in air are correlated with a change in both crystalline phase and optical constants. Surface analysis corroborates a copper deficiency induced by room temperature oxidation in air. Surprisingly, storage in a <0.1 ppm oxygen and water atmosphere significantly slows but does not halt the rise in conductivity with time. However, an Al2O3 overlayer-also grown by ALD-results in significantly lower carrier concentrations as well as dramatically slower carrier addition with time, even under ambient conditions. The implications for future use of Cu2S in more efficient (p/n(+)) and stable thin film photovoltaics are discussed.
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