期刊
JOURNAL OF PHYSICS-CONDENSED MATTER
卷 27, 期 8, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0953-8984/27/8/083002
关键词
Raman scattering; graphene; defects; dopants
资金
- CNPq
- FAPEMIG
- US Department of Energy [DE-FG02-05ER46207]
- Swiss National Science Foundation [200021_149433]
- Swiss National Science Foundation (SNF) [200021_149433] Funding Source: Swiss National Science Foundation (SNF)
- U.S. Department of Energy (DOE) [DE-FG02-05ER46207] Funding Source: U.S. Department of Energy (DOE)
In this article we review Raman studies of defects and dopants in graphene as well as the importance of both for device applications. First a brief overview of Raman spectroscopy of graphene is presented. In the following section we discuss the Raman characterization of three defect types: point defects, edges, and grain boundaries. The next section reviews the dependence of the Raman spectrum on dopants and highlights several common doping techniques. In the final section, several device applications are discussed which exploit doping and defects in graphene. Generally defects degrade the figures of merit for devices, such as carrier mobility and conductivity, whereas doping provides a means to tune the carrier concentration in graphene thereby enabling the engineering of novel material systems. Accurately measuring both the defect density and doping is critical and Raman spectroscopy provides a powerful tool to accomplish this task.
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