期刊
ELECTRONICS LETTERS
卷 50, 期 23, 页码 1731-1732出版社
WILEY
DOI: 10.1049/el.2014.2437
关键词
millimetre wave integrated circuits; power combiners; transmission lines; millimetre-wave broadband waveguide based power combiner; lossy waveguide-based power combiner; lossy planar transmission lines; reflection coefficients; millimetre-wave broadband high solid-state power; frequency 26; 5 GHz to 40 GHz
资金
- KIST internal programme
High-temperature operating performance of p-i-p quantum dots-in-awell infrared photodetectors (QDIPs) is successfully demonstrated. The optically active region consists of 10 layers of p-doped selfassembled InAs quantum dots (QDs) asymmetrically positioned in In0.15Ga0.85As quantum wells (QWs). The dark current is suppressed by an incorporated superlattice (SL) structure composed of 10 pairs of AlGaAs/GaAs heterostructure. The very low recorded dark current makes the fabricated p-i-p QDIPs suitable for high-temperature operation. The measured photoresponse reveals broad mid-wave infrared (MWIR) detection up to 200 K.
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