1.3 μm InAs/GaAs quantum-dot laser monolithically grown on Si substrates operating over 100°C

A high-performance 1.3 mu m InAs/GaAs quantum-dot laser directly grown on Si substrates has been achieved by using InAlAs/GaAs strained-layer superlattice serving as dislocation filter layers ( DFLs). The Si-based laser achieves lasing operation up to 111 degrees C with a threshold current density of 200 A/cm(2) and an output power exceeding 100 mW at room temperature.