期刊
JOURNAL OF PHYSICS-CONDENSED MATTER
卷 27, 期 31, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0953-8984/27/31/313201
关键词
strain engineering; two dimensional crystals; electronic structure; optoelectronics
资金
- Juan de la Cierva Program
- Spanish Ministry of Economy (MINECO) [FIS2011-23713]
- European Union (FP7) through the FP7-Marie Curie Project [PIEF-GA-2011-300802]
- Fundacion BBVA
- European project FP7-PEOPLE-CIG 'LSIE 2D'
- Italian National MIUR Prin project [20105ZZTSE]
- Italian MIUR program 'Progetto Premiale' Project ABNANOTECH
- European Union Seventh Framework Programme [604391]
- European Research Council [290846]
One of the fascinating properties of the new families of two-dimensional crystals is their high stretchability and the possibility to use external strain to manipulate, in a controlled manner, their optical and electronic properties. Strain engineering, understood as the field that study how the physical properties of materials can be tuned by controlling the elastic strain fields applied to it, has a perfect platform for its implementation in the atomically thin semiconducting materials. The object of this review is to give an overview of the recent progress to control the optical and electronics properties of 2D crystals, by means of strain engineering. We will concentrate on semiconducting layered materials, with especial emphasis in transition metal dichalcogenides (MoS2, WS2, MoSe2 and WSe2). The effect of strain in other atomically thin materials like black phosphorus, silicene, etc, is also considered. The benefits of strain engineering in 2D crystals for applications in nanoelectronics and optoelectronics will be revised, and the open problems in the field will be discussed.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据