期刊
ELECTRONICS LETTERS
卷 50, 期 3, 页码 211-212出版社
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el.2013.2846
关键词
Doppler radar; synthetic aperture radar; bistatic chirp scaling algorithm; CSA; forward-looking bistatic synthetic aperture radar data; FL-BiSAR data; double-square-root equation; range Doppler spectrum
An AlN/AlGaN high-electron-mobility transistor (HEMT) fabricated on a free-standing AlN substrate is demonstrated. A metal stack, composed of Zr/Al/Mo/Au, was found to show low contact resistivity for source and drain ohmic contacts. The fabricated AlN/AlGaN HEMT exhibited a maximum drain current of 38 mA/mm with a threshold voltage of -3.4 V. Negligible drain current degradation was observed at temperatures from 300 to 573 K, demonstrating that an AlN/AlGaN approach on an AlN substrate is promising for stable high-temperature operation.
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