期刊
JOURNAL OF PHYSICS-CONDENSED MATTER
卷 27, 期 5, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0953-8984/27/5/052203
关键词
quantum interference; Raman spectroscopy; topological insulators
资金
- West Virginia Higher Education Policy Commission [HEPC.dsr.12.29]
We report on a > 100-fold enhancement of Raman responses from Bi2Se3 thin films if laser photon energy switches from 2.33 eV (532 nm) to 1.58 eV (785 nm), which is due to direct optical coupling to Dirac surface states (SS) at the resonance energy of similar to 1.5 eV (a thickness-independent enhancement) and due to nonlinearly excited Dirac plasmon (a thickness-dependent enhancement). Owing to the direct optical coupling, we observed an in-plane phonon mode of hexagonally arranged Se-atoms associated with a continuous network of Dirac SS. This mode revealed a Fano lineshape for films < 15 nm thick, resulting from quantum interference between surface phonon and Dirac plasmon states.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据