Butterfly packaged high-speed and low leakage InGaAs quantum well photodiode for 2000nm wavelength systems

An edge-coupled high-speed photodiode based on strained InGaAs quantum wells for detection at 2000nm is demonstrated. The fabricated device shows a leakage current as low as 120nA at -3V bias voltage and a responsivity of around 0.3A/W at 2000nm. The high-speed butterfly packaging of the device is presented which shows a 3dB bandwidth of more than 10GHz. The device shows similar highspeed performance at 1550nm.