期刊
ELECTRONICS LETTERS
卷 49, 期 4, 页码 281-282出版社
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el.2012.4335
关键词
-
资金
- EU [258033]
An edge-coupled high-speed photodiode based on strained InGaAs quantum wells for detection at 2000nm is demonstrated. The fabricated device shows a leakage current as low as 120nA at -3V bias voltage and a responsivity of around 0.3A/W at 2000nm. The high-speed butterfly packaging of the device is presented which shows a 3dB bandwidth of more than 10GHz. The device shows similar highspeed performance at 1550nm.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据