Using dark states for exciton storage in transition-metal dichalcogenides

We explore the possibility of storing excitons in excitonic dark states in monolayer semiconducting transition-metal dichalcogenides. In addition to being optically inactive, these dark states require the electron and hole to be spatially separated, thus inhibiting electron/hole recombination and allowing exciton lifetimes to be extended. Based on an atomistic exciton model, we derive transition matrix elements and an approximate selection rule showing that excitons could be transitioned into and out of dark states using a pulsed infrared laser. For illustration, we also present exciton population scenarios based on a population analysis for different recombination decay constants. Longer exciton lifetimes could make these materials candidates for applications in energy management and quantum information processing.