期刊
ELECTRONICS LETTERS
卷 48, 期 14, 页码 861-862出版社
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el.2012.1347
关键词
-
资金
- Swedish Foundation of Strategic Research
Reported is the realisation of a graphene FET microwave amplifier operating at 1 GHz, exhibiting a small-signal power gain of 10 dB and a noise figure of 6.4 dB. The amplifier utilises a matching inductor on the gate yielding a return loss of 20 dB. The design is optimised for maximum gain and the optimum noise figure is extracted by noise modelling and predicted to be close to 1 dB for the intrinsic graphene FET at this frequency. The presented results complement existing graphene FET applications and are promising for future graphene microwave circuits.
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