期刊
ELECTRONICS LETTERS
卷 47, 期 7, 页码 424-425出版社
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el.2011.0343
关键词
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资金
- National Natural Science Foundation of China [60936002]
- Engineering and Physical Sciences Research Council [EP/F06294X/1]
- Royal Society with China [JP090873]
- Engineering and Physical Sciences Research Council [EP/F06294X/1] Funding Source: researchfish
- EPSRC [EP/F06294X/1] Funding Source: UKRI
A generalised Butterworth-Van Dyke (GBVD) equivalent circuit model for a thin-film bulk acoustic resonator (FBAR), especially for a FBAR with a high electromechanical coupling constant (k(t)(2)), is presented. The derivation starts from the ideal impedance formula for the FBAR, then acoustic loss, dielectric loss, and electrode electrical loss are introduced step by step. Results show that the widely used modified Butterworth-Van Dyke (MBVD) model is a special case of a GBVD model using a low k(t)(2) approximation.
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