Mid-infrared quantum dot barrier photodetectors with extended cutoff wavelengths

A method to extend the cutoff wavelength of mid-infrared barrier photodetectors by incorporating self-assembled InSb quantum dots into the active area of the detector is demonstrated. This approach enables the extension of the cutoff wavelength of barrier photodetectors from 4.2 to 6 mu m, demonstrating infrared response at temperatures up to 225 K.