期刊
ELECTRONICS LETTERS
卷 46, 期 19, 页码 1335-1336出版社
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el.2010.1603
关键词
-
资金
- U.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DE-EG02-07ER-46465]
A hybrid fabrication technique is reported that relies on photolithography plus mechanical peel-off and enables, for the first time, the patterning of positive and negative charges spatially on n- and p-type organic field effect transistors, respectively, on the same wafer. Using the proposed fabrication and threshold adjusting technique, the first organic FET-based CMOS inverter has been fabricated that employs threshold adjustment for both p- and n-type transistors to bias them so that the inverter has maximum gain.
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