4.3 Article

Polarisation-analysing CMOS photosensor with monolithically embedded wire grid polariser

期刊

ELECTRONICS LETTERS
卷 45, 期 4, 页码 228-229

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INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el:20093132

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资金

  1. Ministry of Education, Science, Sports and Culture, Japan [18681024]
  2. VLSI Design and Education Center (VDEC)
  3. University of Tokyo
  4. Cadence Design Systems, Inc
  5. Grants-in-Aid for Scientific Research [18681024] Funding Source: KAKEN

向作者/读者索取更多资源

A novel polarisation-analysing CMOS photosensor is proposed, and its application demonstrated. A wire grid structure configured with a metal wiring layer on a photosensor pixel is used as an embedded polariser. The polarisation-dependent sensitivity of the photosensor is demonstrated even in a wavelength region that is smaller than the grid pitch. The polarimetric measurement of a sucrose solution is also demonstrated successfully.

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