期刊
ELECTRONICS LETTERS
卷 45, 期 16, 页码 833-834出版社
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el.2009.0336
关键词
-
资金
- Lithuanian State Science and Studies Foundation [C-07004/C-17/2009]
A silicon-lens coupled bow-tie InGaAs-based diode with broken symmetry is demonstrated for terahertz imaging applications below 1 THz at room temperature. Transient features and the dynamic range of the bow-tie InGaAs-based sensor are explored experimentally, proving the possibility to use the device in real-time imaging systems. Response time is found to be less than 7 ns, responsivity of 0.1 mA/W, and noise equivalent power of 5.8 nW/pHz.
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