期刊
ELECTRONICS LETTERS
卷 45, 期 25, 页码 1320-U68出版社
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el.2009.2207
关键词
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资金
- Region Languedoc-Roussillon
- French National Research Agency (ANR) [ANR-08-NANO-053]
Laser diodes based on a novel active zone, namely type IIGa(0.50)In(0.50)As/GaSb quantum wells where the Ga(0.50)In(0.50)As layers are under high tensile strain (3.9%), have been investigated. Broad area diodes lased up to room temperature in the pulsed regime. Laser emission is centred at similar to 2.3 mu m, a technologically important wavelength, with a threshold-current density of 1.6 kA/cm(2) and a characteristic temperature T(0) = 50 K.
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