期刊
ELECTRONICS LETTERS
卷 45, 期 7, 页码 376-U54出版社
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el.2009.0074
关键词
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The realisation of 0.1 mu m gate AlGaN/GaN high electron mobility transistors grown on high-resistivity silicon substrates is reported. A maximum current density of 750 mA/mm and an extrinsic transconductance of 225 mS/mm are achieved. The devices feature a record current gain cutoff frequency as high as f(T) = 90 GHz, the highest value ever reported from a GaN-based device grown on a silicon substrate. The results demonstrate the great potential of GaN-on-silicon technology for low-cost millimetre-wave applications.
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