期刊
ELECTRONICS LETTERS
卷 44, 期 7, 页码 474-U6出版社
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el:20080106
关键词
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Very low threshold current density InGaAs/ GaAs quantum well laser diodes grown by molecular beam epitaxy on InGaAs metamorphic buffers are reported. The lasing wavelength of the ridge waveguide laser diode with cavity length of 1200 mm is centred at 1337.2 nm; the threshold current density is 205 A/cm(2) at room temperature under continuous-wave operation.
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