期刊
ELECTRONICS LETTERS
卷 44, 期 22, 页码 1320-U45出版社
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el:20082219
关键词
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资金
- CNRS
- Delegation Generale pour l'Armement
- Region Nord-Pas de Calais
The fabrication of InGaAs/InP uni-travelling-carrier photodiodes integrated with broadband horn antennas and demonstration of photomixing up to 1.8THz are reported. A radiated power of 1.1 mu W at 940 GHz was measured for a photocurrent of only 2.75 mA (50 mW optical power), demonstrating the high efficiency of the device. The conversion efficiency obtained has been increased by more than a decade compared to the best reported values in the literature. The photomixer is used to identify the 1411 GHz water vapour absorption line at atmospheric pressure.
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