期刊
ELECTRONICS LETTERS
卷 44, 期 25, 页码 1487-+出版社
INST ENGINEERING TECHNOLOGY-IET
DOI: 10.1049/el:20082925
关键词
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资金
- Air Force Office of Scientific Research
Surface leakage current is a significant source of dark current in conventional narrow-gap p-n junction photodetectors. It is shown that the nBn photodetector, which was originally designed to eliminate dark current arising from generation-recombination mechanisms, also effectively eliminates surface leakage currents. The result is a measured dark current lower by over six orders of magnitude than that of the InAs p-n photodetector for device temperatures of 140 K.
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