期刊
ELECTRONIC MATERIALS LETTERS
卷 10, 期 4, 页码 737-741出版社
KOREAN INST METALS MATERIALS
DOI: 10.1007/s13391-013-3303-z
关键词
inkjet; ZTO; oxide TFT; process optimization
资金
- Hoseo University [20100521]
Inkjet printing process was optimized to improve the electrical properties of inkjet-printed zinc-tin oxide thin-film transistors. Among the process conditions evaluated, inkjet voltage and substrate temperature were found to be the key factors for obtaining uniform thin-films and good thin-film transistors. The optimization process with a jetting voltage of 60 V and substrate temperature of 50 degrees C gave good electrical properties, such as a field-effect mobility of 5.11 cm(2)/V s, a threshold voltage of 2.83 V, a subthreshold slope of 1.33 V/dec, and an on-to-off current ratio of 10(8). The electrical properties of the inkjet-optimized TFTs were superior to those of the unoptimized inkjet TFTs. A positive bias stability was also investigated.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据