期刊
ELECTRONIC MATERIALS LETTERS
卷 10, 期 5, 页码 899-902出版社
KOREAN INST METALS MATERIALS
DOI: 10.1007/s13391-014-3327-z
关键词
InGaZnO; ELA; mobility
资金
- National Science Council of Taiwan, Republic of China [NS C 100-2221-E-006-156-MY2, NSC 100-2221-E-006-045-MY2, NSC 102-2221-E-006-217-MY2]
The influence of 248-nm KrF excimer laser annealing (ELA) with energy density between 0 and 400 mJ/cm(2) on the electrical behavior of indium gallium zinc oxide (InGaZnO) thin-film transistors (TFTs) is investigated. The experimental results show that the saturation mobility and subthreshold swing are improved from 12.4 cm(2)/Vs and 100 mV/dec without ELA to 17.8 cm(2)/Vs and 75 mV/dec, respectively, by applying a 300 mJ/cm(2) laser pulse after the source/drain deposition, while maintaining an almost unchanged turn-off voltage. Such improvements are attributed to the increase in the oxygen vacancies and reduction in the bulk traps in the InGaZnO channel.
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