期刊
ELECTRONIC MATERIALS LETTERS
卷 10, 期 3, 页码 661-664出版社
KOREAN INST METALS MATERIALS
DOI: 10.1007/s13391-013-2206-3
关键词
light emitting diodes; pulsed laser deposition; electroluminescence; n-ZnO:Ga; p-GaN:Mg
资金
- National Natural Science Foundation of China [11144010]
- Research Award Fund for Outstanding Middle-aged Young Scientist of Shandong Province [BS2011ZZ004]
The n-ZnO:Ga/p-GaN:Mg and n-ZnO:Ga/i-ZnO/p-GaN:Mg heterojunction light emitting diodes (LEDs) were fabricated by the pulsed laser deposition (PLD) technique. The blue electroluminescence (EL) of the n-ZnO:Ga/p-GaN:Mg heterojunction LEDs is emitted mainly from the p-GaN layer instead of the n-ZnO:Ga layer, for the reason that the electron injection from n-ZnO:Ga prevailed over the hole injection from p-GaN:Mg due to the higher carrier concentration and carrier mobility in n-ZnO:Ga. On the other hand, the n-ZnO:Ga/i-ZnO/p-GaN:Mg heterojunction LEDs exhibited dominant ultraviolet-blue emission. The reason for this difference is attributed to the inserted undoped i-ZnO layer between n-ZnO:Ga and p-GaN:Mg, in which the holes from p-GaN:Mg and the electrons from n-ZnO:Ga are recombined.
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