期刊
ELECTRONIC MATERIALS LETTERS
卷 9, 期 4, 页码 493-496出版社
KOREAN INST METALS MATERIALS
DOI: 10.1007/s13391-013-0046-9
关键词
ZnO; transparent conductive oxide; sol-gel
资金
- Korea Institute of Energy Technology Evaluation and Planning (KETEP)
- Korea government Ministry of Knowledge Economy [20103030010040]
- Kwangwoon University
- Korea Evaluation Institute of Industrial Technology (KEIT) [20103030010040] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
In this study, to improve the electrical and optical properties of aluminium (Al) doped zinc oxide thin films, we have added small amounts of indium (In) to Al doped ZnO thin films. We will present the results of In and Al doped ZnO thin film on glass substrates prepared by the sol-gel processing method. A rapid thermal annealing process was applied to cure the thin film properties. Different amounts of In were used to dope the AZO thin films to find the optimum process condition. The effects of crystallinity were analyzed by an x-ray diffraction method. In addition, the optical transmittance and electrical proprties of In doped AZO thin films were investigated.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据