期刊
ELECTRONIC MATERIALS LETTERS
卷 9, 期 1, 页码 19-23出版社
KOREAN INST METALS MATERIALS
DOI: 10.1007/s13391-012-2105-z
关键词
II-VI semiconductor; ZnO; electronic structure; electron momentum density; charge transfer
资金
- University Grant Commission (UGC) [SR/33-37/2007, SR/39-982/2010]
The electronic structure of nano-sized ZnO using Compton scattering technique is reported. The nano-crystalline ZnO of size 10.5 nm is synthesized using the chemical route and characterized by XRD, SEM, TEM probes. Using 59.54 keV gamma-rays, the Compton profile measurements are performed on nano-sized as well as bulk ZnO. The present study reveals the narrower electron momentum density in nano-sized ZnO as compared to bulk sample. The ionic model based free atom Compton profiles for a number of configurations of Zn+xO-x (0.0 <= x <= 2.0) are also performed to estimate the charge transfer on compound formation. The present study suggests different amount of charge transfer from Zn to O atom in the nano-sized and bulk ZnO.
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