4.4 Article

Effects of Cu/In Compositional Ratio on the Characteristics of CuInS2 Absorber Layers Prepared by Sulfurization of Metallic Precursors

期刊

ELECTRONIC MATERIALS LETTERS
卷 8, 期 2, 页码 191-197

出版社

KOREAN INST METALS MATERIALS
DOI: 10.1007/s13391-012-2032-z

关键词

CuInS2 (CIS); Thin Film Solar Cells (TFSCs); metallic precursor; Cu/In compositional ratio; sulfurization

资金

  1. Fundamental R&D Program for Core Technology of Materials
  2. Korean Ministry of Knowledge Economy [10037233]
  3. Ho-Nam Leading Industry office through Leading Industry Development for Economic Region
  4. Korea Evaluation Institute of Industrial Technology (KEIT) [10037233] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

向作者/读者索取更多资源

This paper investigates the effects of the Cu/In compositional ratio on morphological, structural and optical properties of CuInS2 (CIS) absorber layers formed by sulfurization of In/Cu stacked precursors. In/Cu stacked precursors were prepared on Mo-coated soda-lime glass substrates by DC magnetron sputtering method. The Cu/In compositional ratio in the precursor thin film was varied from 0.55 to 1.44. The as-deposited stacked precursor thin films were sulfurized using a tubular furnace annealing system in a mixture of N-2 (95%) + H2S (5%) atmosphere at 450 degrees C for 1 hour. X-ray diffraction patterns and Raman spectra results showed that the sulfurized thin films contained both tetragonal CIS and a Cu-based secondary phase, except for the film with a Cu/In compositional ratio of 0.55. Field emission-scanning electron microscopy study showed that the microstructure of the sulfurized CIS thin films became denser with increasing Cu/In compositional ratio. Optical properties of the CIS thin films showed that all the CIS thin films had a good absorption coefficient over 10(4) cm(-1) in the visible region. The direct band gap energy of the sulfurized CIS thin films decreased from 1.39 eV to 1.08 eV with increasing Cu/In compositional ratio. These results demonstrated the effect of the Cu/In compositional ratio on the properties of the CIS thin films and the consequent importance of precisely controlling the metal ratio in the precursor film in order to control the properties of absorber layers in thin film solar cells.

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