期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 48, 期 19, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/48/19/195103
关键词
zinc oxide; pulsed laser deposition; thin films; optical properties; electrical properties; metal-insulator transition
资金
- Romanian National Authority for Scientific Research, CNCS-UEFISCDI [PN-II-ID-PCE-2011-3-0566]
Transparent Nd-doped ZnO films with thickness in the range of 70 to 250 nm were grown by pulsed-laser deposition (PLD) on c-cut sapphire substrates at various oxygen pressures and substrate temperatures. A wide range of optical and electrical properties of the films were obtained and correlated to the composition and crystalline structure. The Nd-doped ZnO films are smooth, dense, and display the wurtzite phase. Different epitaxial relationships between films and substrate as a function of growth pressure and substrate temperature were evidenced by asymmetric x-ray diffraction measurements. By varying PLD growth conditions, the films can be tuned to have either metallic or semiconductor characteristics, with good optical transmittance in the visible range. Moreover, a low-temperature metal-insulator transition may be observed in Nd-doped ZnO films grown under low oxygen pressure. Resistivities as low as 6 x 10(-4) Omega cm and 90% optical transmittance in the visible range and different nearinfrared transmittance are obtained with approximately 1.0-1.5 at.% Nd doping and growth temperature of approximately 500 degrees C.
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