期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 48, 期 40, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/48/40/403001
关键词
InGaN; light emitting diodes; quantum wells; yellow; red; white; growth
资金
- GANEX [ANR-11-LABX-0014]
(Ga,In)N-based light emitting devices are very efficient in producing blue light and to a lesser extent green. Extending their spectral range to longer wavelengths while maintaining high efficiency is a challenge due to material and physical issues related to high-In content (Ga,In)N alloys. We review the current status of yellow and red emitters (light emitting diodes and laser diodes) based on this material system. We also describe the state-of-the-art of devices mixing blue-yellow or red-blue-green coloured light, such as monolithic phosphor-free white light emitting diodes and full-colour micro-displays.
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