期刊
JOURNAL OF PHYSICS D-APPLIED PHYSICS
卷 48, 期 43, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0022-3727/48/43/435101
关键词
2D crystals; CVD; transistors
资金
- Ministry of Science and Technology, Taiwan [NSC 102-2221-E-001-032-MY3, MOST 103-2622-E-002-031]
- nano-project from Academia Sinica, Taiwan
We show that multilayer molybdenum disulfide (MoS2) grown with the chemical vapor deposition (CVD) may exhibit quite distinct behaviors of Raman shifts from those of exfoliated ones. The anomalous Raman shifts depend on CVD growth modes and are attributed to the modified dielectric screening and interlayer coupling of MoS2 in various growth conditions. With repeated CVD growths, we demonstrated the precise control over the layer number of MoS2. A decently large drain current, high ON/OFF ratio of 10(5), and enhanced field-effect mobility can be achieved in transistors fabricated on the six-layer MoS2.
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