期刊
ELECTROCHIMICA ACTA
卷 91, 期 -, 页码 62-68出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.electacta.2012.12.030
关键词
Cyclic voltammetry deposition; Electrodeposited zinc oxide; Memristive switching
资金
- National Science Council, Taiwan [NSC 99-2221-E-035-017-MY3, NSC 100-2113-M-007-006]
Cyclic voltammetry deposition (CV-D) was applied to deposit ZnO films on indium-tin-oxide (ITO) glass. Delineated in details are the optimizations of CV-D parameters which bestow enhanced nucleation of ZnO grains. The result is much superior coverage of the CV-D thin films as compared to those obtained by conventional electrochemical deposition. Memristive devices in the stacks of Pt/ZnO/ITO were prepared and tested. The devices in which ZnO prepared by CV-sweeping within +/-0.9 V for 6 cycles then fix-potential-deposited at -0.75 V for 300s show reproducible forming-free bipolar switching operation at voltages <=+/- 1 V. The cycle-life in DC sweeping mode is at least 200 cycles. The electrical conduction belongs to space-charge-limited-current conduction mechanism, which is fitted to extract carrier mobility 0.97 cm(2)/Vs and carrier. concentration 8.6 x 10(18) cm(-3). Chemical bonding status and concentration profiles of oxygen and zinc were examined by electron spectroscopy and an Auger electron nanoscope. Gradient oxygen bonding status in ZnO film, typical of cyclic voltammetry deposition, facilitates the electrical switching at low voltages. (C) 2012 Elsevier Ltd. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据