期刊
ELECTROCHIMICA ACTA
卷 56, 期 11, 页码 4075-4080出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.electacta.2011.01.119
关键词
In-doped; ZnO; Ni-Zn secondary cells; Physical mixture; In2O3
资金
- National Natural Science Foundation of China [91023031]
- Innovation Fund for Technology Based Firms of China [10C26214104497]
- Production, Teaching and Research Integrated Project of Guangdong Province and Ministry of Education [201013090400341]
In-doped ZnO (IZO) samples were synthesized by a simple co-precipitation method. X-ray diffraction (XRD) patterns, Raman spectra and scanning electron microscopy (SEM) images show that IZO with 2.5 wt% In2O3 has a pure wurtzite structure and a plate-like morphology. IZO with 16.3 wt% In2O3 (theoretical value) mainly shows a wurtzite structure. Cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS) and galvanostatic charge-discharge measurement were utilized to examine the electrochemical performances of IZO with 2.5 wt% In2O3 as anode material for Ni-Zn simulated cells. Compared with the physical mixture of ZnO with In2O3. IZO increases the charge-transfer resistance of zinc electrode. Furthermore, the initial discharge capacity of IZO is 569 mAh g(-1), and the discharge capacity decays slightly with the capacity retention ratio of 95.2% over 73 cycles, which is much higher than that of the physical mixture of ZnO with In2O3. (C) 2011 Elsevier Ltd. All rights reserved.
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