4.6 Article

Electrochemical growth of synthetic melanin thin films by constant potential methods

期刊

ELECTROCHIMICA ACTA
卷 56, 期 7, 页码 2954-2959

出版社

PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.electacta.2010.12.095

关键词

Melanin; Electrochemical oxidation; THAM buffer; Polymerization; Amorphous semiconductor

资金

  1. Korean government (MOEHRD) [KRF-2008-005-J00702]
  2. Center for Human Interface Nano Technology (HINT) [2010-0015037]

向作者/读者索取更多资源

Polymerized melanin thin films were electrochemically synthesized in a 5,6-dihydroxyindole precursor solution on indium tin oxide (ITO) substrates using the cyclic voltammetry and constant potential methods. Tris(hydroxymethyl)aminomethane (THAM) and phosphate buffer solutions were applied to prepare the films that were well deposited to the ITO substrates. The films that were synthesized in the THAM buffer solution exhibited a faster growth rate and better adhesion to the ITO electrodes than the films in the phosphate buffer. The film thickness linearly increased at the growth rate of 0.8 nm/s as the deposition time and number of cycles increased. Two electrochemical conditions produced similar thicknesses as well as physical properties in each buffer solution. However, the constant potential method demonstrated that this provides the synthetic advantages of faster deposition and less consumption of electric charge compared to the cyclic voltammetry route. (C) 2011 Elsevier Ltd. All rights reserved.

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